Semiconductor
SWITCHING REGULATOR APPLICATIONS
SMK0270F
Advanced Power MOSFET
Features
• High Voltage: BVDSS=700V(Min....
Semiconductor
SWITCHING
REGULATOR APPLICATIONS
SMK0270F
Advanced Power MOSFET
Features
High Voltage: BVDSS=700V(Min.)
Low Crss : Crss=6.0F(Typ.) Low gate charge : Qg=7.2nC(Typ.) Low RDS(on) :RDS(on)=6.3Ω(Max.)
Ordering Information
Type No.
Marking
SMK0270F
SMK0270
Package Code TO-220F-3L
PIN Connection
D
G
GDS
TO-220F-3L
S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
② ② ① ①
VDSS
VGSS
ID
TC=25℃ TC=100℃
IDM
PD
IAS
EAS
IAR
EAR
TJ
Tstg
* Limited by maximum junction temperature
Rating
700 ±30 2.0 1.3 8.0 25 2.0 41 2.0 1.8 150 -55~150
Characteristic
Thermal resistance
Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max
4.46 62.5
Unit
V V A A A W A mJ A mJ °C °C
Unit
℃/W
KSD-T0O038-000
1
SMK0270F
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage Gate threshold voltage
V(BR)DSS VGS(th)
ID=250 ㎂, VGS=0V ID=250 ㎂, VGS= VDS
Drain-source cut-off current
IDSS
VDS=700V, VGS=0V
Gate leakage current Drain-source on-resistance Forward transfer conductance
④ ④
IGSS RDS(on)
gfs
VDS=0V, VGS=±30V VGS=10V, ID=1.0A VDS=10V, ID=1.0A
Input ...