MBR60060CTR

Silicon Power Schottky Diode Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IF,SM Maximum forward voltage (per leg) VF Reverse current at rated DC blocking voltage (per leg) IR Thermal characteristics Thermal resistance, junction-case, per leg RΘJC TC = 125 °C tp = 8.3 ms, half sine IF = 300 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C 600 4000 0.75 1 10 50 0.28 600 4000 0.80 1 10 50 0.28 600 4000 0.84 1 10 50 0.28 600 4000 0.84 1 10 50 0.28 A A V mA °C/W www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBR60045CT thru MBR600100CTR www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR60045CT thru MBR600100CTR Pac...