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IR1011

Asahi Kasei Microsystems

Photovoltaic Infrared Sensor

[IR1011] IR1011 Photovoltaic Infrared Sensor GENERAL DESCRIPTION IR1011 is the world smallest mid-infrared quantum photo...


Asahi Kasei Microsystems

IR1011

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Description
[IR1011] IR1011 Photovoltaic Infrared Sensor GENERAL DESCRIPTION IR1011 is the world smallest mid-infrared quantum photo diode, made of InSb. This surface mount type sensor can be operated at room temperature, and applicable to human body detection, non-contacting temperature measurement, and NDIR gas sensor. FEATURES □ Very small / thin package (2.65mm×1.9mm×0.4mm) □ High sensitivities □ Very fast response □ No bias current required Pin Layout 1:N.C. 2:N.C. 4:Dp 3:Dn Pinning / Function Pin 1 2 3 4 MS1472-E-00 Pin Name N.C. N.C. Dn Dp Function N.C. (Please Open N.C. pin.) N.C. (Please Open N.C. pin.) n- Output p- Output -1- 2012/09 Absolute maximum ratings Parameter Symbol Voltage Vin Ambient Temperature*1 Top Storage Temperature Tst Note1: No bias voltage applied Min. -20 -40 -40 Max. 20 85 85 [IR1011] Units V °C °C Electrical properties At room temperature Ta=25°C; unless otherwise specified Parameter Symbol Min. Typ. Max. Condition 500K Blackbody : diameter 22.2mmφ Output Current Ip 4.5 6 7.5 distance 10cm*2 Internal resistance Ro 112 150 188 Ic = ±0.005mA Note 2: Measurement conditions are subject to change without notice. Note 3: 10Hz lock-in amplifier is used in this measurement. Units nA*3 kΩ MS1472-E-00 -2- 2012/09 Optical characteristics 1. Incident angle and Output voltage Vo/Vomax 1.2 COOSScurve IMRe1a0s0u5rement 1.0 0.8 0.6 0.4 0.2 0.0 -100 -80 -60 -40 -20 0 20 40 60 80 100 degree Incident angle and Output voltage 2.Sp...




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