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D2562
2SD2562
Description
INCHANGE Semiconductor isc Silicon
NPN
Darlington Power
Transistor
isc Product Specification 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649 APPLICATIONS ·...
Inchange Semiconductor
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