Document
SPECIFICATION
Device Name : Type Name : Spec. No. :
IGBT MODULE
(RoHS compliant product)
2MBI450U4N-120-50
MS5F 6507
Feb. 14 ’06 H.Kaneda Feb. 14 ’06 M.W atanabe T.Miyasaka
K.Yamada
MS5F6507
1a 14
H04-004-07b
Revised Records
Date
Classification
Ind.
Feb. -14 -’06 Enactment
Content
Applied date
Drawn Checked Checked Approved
Issued date
M.W atanabe K.Yamada T.Miyasaka
Sep. -20 -’07 Revision
a Revised Outline Drawing (P3/14)
T.K oga S.Miyashita K.Yamada T.Miyasaka
MS5F6507
a
2 14
H04-004-06b
1. Outline Drawing ( Unit : mm ) a
2MBI450U4N-120-50 (RoHS compliant product)
OUT NP
2. Equivalent circuit
C P (2)
G1 E1
T1
[Thermistor]
T2
OUT (3,4)
G2 E2
N (1)
MS5F6507
3a 14
H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Max i m u m Ratings
Units
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20 V
Ic
Continuous
Tc=25oC Tc=80oC
600 450
Collector current
Icp
1ms
Tc=25oC Tc=80oC
1200 900
A
-Ic 450
-Ic pulse
1ms
900
Collector Power Dissipation
Pc 1 device
2080
W
Junction temperature Storage temperature
Tj Tstg
+150 -40 to +125
oC
Isolation between terminal and copper base (*1) voltage between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw Mounting (*3) Torque Terminals (*4)
-
3.5 4.5
Nm
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
(*4) Recommendable Value : 3.5 to 4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics min. typ. max.
Zero gate voltage collector current
ICES
VCE=1200V VGE=0V
- - 3.0
Gate-Emitter leakage current
IGES
VCE=0V VGE=±20V
- - 600
Gate-Emitter threshold voltage
VGE(th)
VCE=20V Ic=450mA
4.5 6.5 8.5
VCE(sat) Ic=450A
Tj=25oC
-
2.40 2.55
Collector-Emitter
(terminal) VGE=15V
Tj=125oC
-
2.60
-
saturation voltage
VCE(sat)
Tj=25oC
-
1.90 2.05
(chip)
Tj=125oC
-
2.10
-
Inverter
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
50
-
ton Vcc=600V
- 0.32 1.20
Turn-on time
tr Ic=450A
- 0.10 0.60
tr(i) VGE=±15V
- 0.03
-
Turn-off time
toff RG=1.1Ω tf
- 0.41 1.00 - 0.07 0.30
VF
IF=450A
Tj=25oC
-
2.10 2.25
Forward on voltage
(terminal) VF
VGE=0V
Tj=125oC Tj=25oC
-
2.20 1.65 1.80
(chip)
Tj=125oC
-
1.75
-
Reverse recovery time
trr
IF=450A
- - 0.35
Lead resistance, terminal-chip (*5)
R lead
- 1.00
-
Thermistor
Resistance
R
T=25oC T=100oC
- 5000 465 495
520
B value
B T=25/50oC
3305
3375
3450
(*5) Biggest internal terminal resistance among arm.
Units mA nA V
V nF
us
V us mΩ Ω K
5. Thermal resistance characteristics
It em s
Sym b o l s
Conditions
Characteristics min. typ. max.
Thermal resistance(1device) Rth(j-c)
IGBT FWD
- - 0.06 - - 0.10
Contact Thermal resistance (1 device) (*6)
Rth(c-f)
with Thermal Compound
- 0.0167 -
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units oC/W
MS5F6507
4a 14
H04-004-03a
6.Recommend way of module mounting to Heat sink Clamping (1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)
(2) Final :Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)
(3) (1) (2) (4)
Mounting holes Heat sink
Module
7. Indication on module Logo of production
Lot.No.
2M BI 450U4N-120-50
450A 1200V
Place of manufacturing (code)
8. Applicable category This specification is applied to IGBT-Module named 2MBI450U4N-120-50.
9. Storage and transportation notes • The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . Be careful to solderability of the terminals if the module has passed over one year from manufacturing date, under the above storage condition.
• Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
• Avoid exposure to corrosive gases and dust.
• Avoid excessive external force on the module.
• Store modules with unprocessed terminals.
• Do not drop or otherwise shock the modules when transporting.
10. Definitions of switching time
RG V GE
L
V CE Ic
0V VGE
VCE V cc
0V Ic 0A
11. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
~~ ~~ ~~
90%
tr r 90%
Ir r Ic
10% 10%
tr ( i ) tr to n
VCE
to f f
0V
90% 10%
tf
MS5F6507
5a 14
H04-004-03a
12. List of material (リスト) 14 13 6 15
17
7 8
4
31
16 5
9 2
No. Parts
(Total weight of soldering material(typ) : 10.5 g)
Material (main)
Ref.
1 Base Plate
Cu Ni plating
2 Terminal
Ni plating (Internal) Cu
Lead free solder plating (External)
3 Cover
PPS resin UL 94V-0
4 Case
PPS resin UL 94V-0
5 Isolation substrate
.