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2MBI450U4N-120-50 Dataheets PDF



Part Number 2MBI450U4N-120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI450U4N-120-50 Datasheet2MBI450U4N-120-50 Datasheet (PDF)

SPECIFICATION Device Name : Type Name : Spec. No. : IGBT MODULE (RoHS compliant product) 2MBI450U4N-120-50 MS5F 6507 Feb. 14 ’06 H.Kaneda Feb. 14 ’06 M.W atanabe T.Miyasaka K.Yamada MS5F6507 1a 14 H04-004-07b Revised Records Date Classification Ind. Feb. -14 -’06 Enactment Content Applied date Drawn Checked Checked Approved Issued date M.W atanabe K.Yamada T.Miyasaka Sep. -20 -’07 Revision a Revised Outline Drawing (P3/14) T.K oga S.Miyashita K.Yamada T.Miyasaka MS5F6507 a 2 .

  2MBI450U4N-120-50   2MBI450U4N-120-50


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SPECIFICATION Device Name : Type Name : Spec. No. : IGBT MODULE (RoHS compliant product) 2MBI450U4N-120-50 MS5F 6507 Feb. 14 ’06 H.Kaneda Feb. 14 ’06 M.W atanabe T.Miyasaka K.Yamada MS5F6507 1a 14 H04-004-07b Revised Records Date Classification Ind. Feb. -14 -’06 Enactment Content Applied date Drawn Checked Checked Approved Issued date M.W atanabe K.Yamada T.Miyasaka Sep. -20 -’07 Revision a Revised Outline Drawing (P3/14) T.K oga S.Miyashita K.Yamada T.Miyasaka MS5F6507 a 2 14 H04-004-06b 1. Outline Drawing ( Unit : mm ) a 2MBI450U4N-120-50 (RoHS compliant product) OUT NP 2. Equivalent circuit C P (2) G1 E1 T1 [Thermistor] T2 OUT (3,4) G2 E2 N (1) MS5F6507 3a 14 H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Max i m u m Ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=25oC Tc=80oC 600 450 Collector current Icp 1ms Tc=25oC Tc=80oC 1200 900 A -Ic 450 -Ic pulse 1ms 900 Collector Power Dissipation Pc 1 device 2080 W Junction temperature Storage temperature Tj Tstg +150 -40 to +125 oC Isolation between terminal and copper base (*1) voltage between thermistor and others (*2) Viso AC : 1min. 2500 VAC Screw Mounting (*3) Torque Terminals (*4) - 3.5 4.5 Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5 to 3.5 Nm (M5) (*4) Recommendable Value : 3.5 to 4.5 Nm (M6) 4. Electrical characteristics ( at Tj= 25oC unless otherwise specified ) It em s Sym b o l s Conditions Characteristics min. typ. max. Zero gate voltage collector current ICES VCE=1200V VGE=0V - - 3.0 Gate-Emitter leakage current IGES VCE=0V VGE=±20V - - 600 Gate-Emitter threshold voltage VGE(th) VCE=20V Ic=450mA 4.5 6.5 8.5 VCE(sat) Ic=450A Tj=25oC - 2.40 2.55 Collector-Emitter (terminal) VGE=15V Tj=125oC - 2.60 - saturation voltage VCE(sat) Tj=25oC - 1.90 2.05 (chip) Tj=125oC - 2.10 - Inverter Input capacitance Cies VCE=10V,VGE=0V,f=1MHz - 50 - ton Vcc=600V - 0.32 1.20 Turn-on time tr Ic=450A - 0.10 0.60 tr(i) VGE=±15V - 0.03 - Turn-off time toff RG=1.1Ω tf - 0.41 1.00 - 0.07 0.30 VF IF=450A Tj=25oC - 2.10 2.25 Forward on voltage (terminal) VF VGE=0V Tj=125oC Tj=25oC - 2.20 1.65 1.80 (chip) Tj=125oC - 1.75 - Reverse recovery time trr IF=450A - - 0.35 Lead resistance, terminal-chip (*5) R lead - 1.00 - Thermistor Resistance R T=25oC T=100oC - 5000 465 495 520 B value B T=25/50oC 3305 3375 3450 (*5) Biggest internal terminal resistance among arm. Units mA nA V V nF us V us mΩ Ω K 5. Thermal resistance characteristics It em s Sym b o l s Conditions Characteristics min. typ. max. Thermal resistance(1device) Rth(j-c) IGBT FWD - - 0.06 - - 0.10 Contact Thermal resistance (1 device) (*6) Rth(c-f) with Thermal Compound - 0.0167 - (*6) This is the value which is defined mounting on the additional cooling fin with thermal compound. Units oC/W MS5F6507 4a 14 H04-004-03a 6.Recommend way of module mounting to Heat sink Clamping (1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4) (2) Final :Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1) (3) (1) (2) (4) Mounting holes Heat sink Module 7. Indication on module Logo of production Lot.No. 2M BI 450U4N-120-50 450A 1200V Place of manufacturing (code) 8. Applicable category This specification is applied to IGBT-Module named 2MBI450U4N-120-50. 9. Storage and transportation notes • The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . Be careful to solderability of the terminals if the module has passed over one year from manufacturing date, under the above storage condition. • Store modules in a place with few temperature changes in order to avoid condensation on the module surface. • Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the module. • Store modules with unprocessed terminals. • Do not drop or otherwise shock the modules when transporting. 10. Definitions of switching time RG V GE L V CE Ic 0V VGE VCE V cc 0V Ic 0A 11. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box ~~ ~~ ~~ 90% tr r 90% Ir r Ic 10% 10% tr ( i ) tr to n VCE to f f 0V 90% 10% tf MS5F6507 5a 14 H04-004-03a 12. List of material (リスト) 14 13 6 15 17 7 8 4 31 16 5 9 2 No. Parts (Total weight of soldering material(typ) : 10.5 g) Material (main) Ref. 1 Base Plate Cu Ni plating 2 Terminal Ni plating (Internal) Cu Lead free solder plating (External) 3 Cover PPS resin UL 94V-0 4 Case PPS resin UL 94V-0 5 Isolation substrate .


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