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2MBI200U4H-170

Fuji Electric

IGBT

SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI200U4H-170 Spec. No. : MS5F 6136 May. 27 ’05 May. 27 ’05 ...


Fuji Electric

2MBI200U4H-170

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Description
SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI200U4H-170 Spec. No. : MS5F 6136 May. 27 ’05 May. 27 ’05 S.Miyashita T.Miyasaka K.Yamada Y.Seki MS5F6136 1 13 H04-004-07b Revised Records Date Classification Ind. May.-27 -’05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T.Miyasaka K.Yamada Y.Seki MS5F6136 2 13 H04-004-06b 1. Outline Drawing ( Unit : mm ) 2MBI200U4H-170 2. Equivalent circuit MS5F6136 3 13 H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ) It em s Sym bols Conditions Collector-Emitter voltage VCES Gate-Emitter voltage VGES Ic Continuous Tc=25°C Tc=80°C Collector current Icp 1ms -Ic Tc=25°C Tc=80°C -Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min. Screw Mounting (*2) Torque Terminals (*3) - (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) (*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6) Max i m u m Ratings 1700 ±20 300 200 600 400 200 400 1040 150 -40 ~ +125 Units V V A W °C 3400 VAC 3.5 4.5 Nm 4. Electrical characteristics ( at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage Collector current ICES VGE = 0V VCE = 1700V Gate-Emitter leakage current IGES VCE = 0V VGE=±20V Gate-Em...




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