Document
http://www.fujielectric.com/products/semiconductor/
2MBI200VH-120-50
IGBT MODULE (V series) 1200V / 200A / 2 in one package
Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Collector-Emitter voltage
Symbols VCES
Conditions
Gate-Emitter voltage
VGES
Inverter
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Screw torque
Mounting (*2) Terminals (*3)
-
1ms 1ms 1 device
AC : 1min.
Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6) (c) Note *3: Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=100°C Tc=25°C
Inverter
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Symbols
ICES IGES VGE (th)
VCE (sat) (terminal)
VCE (sat) (chip)
Cies ton tr tr (i) toff tf
VF (terminal)
VF (chip)
trr
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA
Tj=25°C
Tj=125°C
VGE = 15V IC = 200A
Tj=150°C Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V IC = 200A VGE = ±15V RG = 2.7Ω Tj = 150°C
Tj=25°C
Tj=125°C
VGE = 0V IF = 200A
Tj=150°C Tj=25°C
Tj=125°C
Tj=150°C
IF = 200A
Items
Symbols Conditions
Thermal resistance (1device) Contact thermal resistance (1device) (*4)
Rth(j-c) Rth(c-f)
IGBT FWD with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings 1200 ±20 200 240 400 200 400 1110 175 150 125
-40 ~ +125 2500 6.0 5.0
Units V V
A
W
°C
VAC Nm
Characteristics min. typ. max.
- - 2.0 - - 400 6.0 6.5 7.0 - 1.95 2.40 - 2.25 - 2.30 - 1.75 2.15 - 2.05 - 2.10 - 18 - 0.60 - 0.20 - 0.05 - 0.80 - 0.08 - 1.85 2.35 - 2.00 - 1.95 - 1.70 2.15 - 1.85 - 1.80 - 0.15 -
Units mA nA V
V
nF µs
V
µs
Characteristics min. typ. max.
- - 0.135
- - 0.200
- 0.0250 -
Units °C/W
1
2MBI200VH-120-50
Characteristics (Representative)
Collector current: Ic [A]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
500
VGE=20V15V 12V 400
300
10V 200
100
0 0
8V
1234 Collector-Emitter voltage: VCE [V]
5
Collector Current: Ic [A]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
500 Tj=25°C 125°C
400 150°C
300
200
100
0 01234 Collector-Emitter Voltage: VCE [V]
5
Gate Capacitance: Cies, Coes, Cres [nF]
Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
Cies
10
Cres 1
Coes
0.1 0
5 10 15 20 25 Collector-Emitter voltage: VCE [V]
30
2
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Collector current: Ic [A]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
500 VGE= 20V 15V
400 12V
300
200 10V
100
0 0
8V
1234 Collector-Emitter voltage: VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip
10
Collector-Emitter Voltage: VCE [V]
8
6
4
2
Ic=400A Ic=200A
Ic=100A
0 5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C
VCE
VGE
Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div]
0 500 1000 1500 2000 2500 Gate charge: Qg [nC]
2MBI200VH-120-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=125°C
10000
1000 100
toff ton tr tf
10 0
100 200 300 400 Collector current: Ic [A]
500
Switching time: ton, tr, toff, tf [nsec]
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=150°C
10000
1000 100
ttoofnf tr tf
10 0
100 200 300 400 Collector current: Ic [A]
500
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125°C
10000
1000
toff ton tr
100
10 1
tf
10 Gate resistance: RG [Ω]
100
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=125°C, 150°C
60 Tj=125oC Tj=150oC
Eoff
40 Eon
20 Err
0 0 100 200 300 400 500 Collector current: Ic [A]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125°C, 150°C
100 Tj=125oC Tj=150oC
Eon
50
Eoff
Err 0
1 10 100 Gate resistance: RG [Ω]
3
Collecto.