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2MBI200VH-120-50 Dataheets PDF



Part Number 2MBI200VH-120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI200VH-120-50 Datasheet2MBI200VH-120-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 2MBI200VH-120-50 IGBT MODULE (V series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Symbols VCES .

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http://www.fujielectric.com/products/semiconductor/ 2MBI200VH-120-50 IGBT MODULE (V series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Symbols VCES Conditions Gate-Emitter voltage VGES Inverter Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - 1ms 1ms 1 device AC : 1min. Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6) (c) Note *3: Recommendable Value : 2.5-5.0 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Tc=100°C Tc=25°C Inverter Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA Tj=25°C Tj=125°C VGE = 15V IC = 200A Tj=150°C Tj=25°C Tj=125°C Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 200A VGE = ±15V RG = 2.7Ω Tj = 150°C Tj=25°C Tj=125°C VGE = 0V IF = 200A Tj=150°C Tj=25°C Tj=125°C Tj=150°C IF = 200A Items Symbols Conditions Thermal resistance (1device) Contact thermal resistance (1device) (*4) Rth(j-c) Rth(c-f) IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. IGBT Modules Maximum ratings 1200 ±20 200 240 400 200 400 1110 175 150 125 -40 ~ +125 2500 6.0 5.0 Units V V A W °C VAC Nm Characteristics min. typ. max. - - 2.0 - - 400 6.0 6.5 7.0 - 1.95 2.40 - 2.25 - 2.30 - 1.75 2.15 - 2.05 - 2.10 - 18 - 0.60 - 0.20 - 0.05 - 0.80 - 0.08 - 1.85 2.35 - 2.00 - 1.95 - 1.70 2.15 - 1.85 - 1.80 - 0.15 - Units mA nA V V nF µs V µs Characteristics min. typ. max. - - 0.135 - - 0.200 - 0.0250 - Units °C/W 1 2MBI200VH-120-50 Characteristics (Representative) Collector current: Ic [A] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 VGE=20V15V 12V 400 300 10V 200 100 0 0 8V 1234 Collector-Emitter voltage: VCE [V] 5 Collector Current: Ic [A] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 500 Tj=25°C 125°C 400 150°C 300 200 100 0 01234 Collector-Emitter Voltage: VCE [V] 5 Gate Capacitance: Cies, Coes, Cres [nF] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C 100 Cies 10 Cres 1 Coes 0.1 0 5 10 15 20 25 Collector-Emitter voltage: VCE [V] 30 2 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Collector current: Ic [A] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 500 VGE= 20V 15V 400 12V 300 200 10V 100 0 0 8V 1234 Collector-Emitter voltage: VCE [V] 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 Collector-Emitter Voltage: VCE [V] 8 6 4 2 Ic=400A Ic=200A Ic=100A 0 5 10 15 20 25 Gate-Emitter Voltage: VGE [V] Dynamic Gate Charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C VCE VGE Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] 0 500 1000 1500 2000 2500 Gate charge: Qg [nC] 2MBI200VH-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=125°C 10000 1000 100 toff ton tr tf 10 0 100 200 300 400 Collector current: Ic [A] 500 Switching time: ton, tr, toff, tf [nsec] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=150°C 10000 1000 100 ttoofnf tr tf 10 0 100 200 300 400 Collector current: Ic [A] 500 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125°C 10000 1000 toff ton tr 100 10 1 tf 10 Gate resistance: RG [Ω] 100 Switching loss: Eon, Eoff, Err [mJ/pulse] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=125°C, 150°C 60 Tj=125oC Tj=150oC Eoff 40 Eon 20 Err 0 0 100 200 300 400 500 Collector current: Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125°C, 150°C 100 Tj=125oC Tj=150oC Eon 50 Eoff Err 0 1 10 100 Gate resistance: RG [Ω] 3 Collecto.


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