4MBI200T-060

SPECIFICATION Device Name : Type Name : Spec. No. : IGBT Module 4MBI200T-060 MS5F 05498 Jun 16 ‘03 K.Muramatsu Jun 17 ‘03 T.Miyasaka T.Fujihira K.Yamada Fuji Electric Co.,Ltd. Matsumoto Factory MS5F 05498 1 14 H04-004-07 Revised Records Date Classification Ind. Jun.-17-'03 enactment Content Applied date Issued date Drawn Checked Approved T.Miyasaka T.Fujihira K.Yamada MS5F 05498 2 14 H04-004-06 1. Outline Drawing ( Unit : mm ) 4MBI200T-060 2. Equivalent circuit [Inverter] 13 17 14 U 18 5,6 15 19 16 20 ( ) shows reference dimension. 21,22 [Thermistor] 89 V 2,3 1,24 MS5F 05498 3 14 H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） Items Symbols Conditions Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic=1mA Ic Duty=100 % Collector current Collector Power Dissipation Junction temperature Ic pulse IF IF pulse Pc Tj 1ms Duty=50 % 1ms 1 device Storage temperature Tstg Isolation voltage(*1) Viso AC : 1min. Screw Torque Mounting(*2) (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 N m (M5) Maximum Ratings 600 ±20 200 400 200 400 540 150 -40~ +125 2500 3.5 Units V V A W ℃ ℃ V Nm Inverter 4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified) Items Symbols Conditions Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage I...