IGBT
SPECIFICATION
Device Name : Type Name : Spec. No. :
IGBT Module 4MBI75T-060 MS5F 5432
Apr. 23 ’03 S.Ogawa Apr. 23 ’03...
Description
SPECIFICATION
Device Name : Type Name : Spec. No. :
IGBT Module 4MBI75T-060 MS5F 5432
Apr. 23 ’03 S.Ogawa Apr. 23 ’03 T.Miyasaka Apr. - 23 - ’03 K.Yamada
T.Fujihira
Fuji Electric Co.,Ltd. Matsumoto Factory
MS5F 5432
1 14
a
b c
H04-004-07
Revised Records
Date
Classification
Ind.
Apr. - 23- ’03 enactment
Content
Applied date
Issued date
Drawn Checked Approved T.Miyasaka K.Yamada T.Fujihira
Oct. - 16- ’03 Revision
a Added thermistor
(P3/14, 4/14, 12/14)
Y.Kobayashi
T.Miyasaka K.Yamada
Y.Seki
Dec. - 10- ’03 Revision
b Revised VCE(sat),VF
(P4/14, 10/14, 12/14)
Y.Kobayashi
S.Miyashita K.Yamada
Y.Seki
Sep. - 07- ’04 Revision
c Revised VF
(P4/14, 12/14)
Y.Kobayashi
S.Miyashita K.Yamada
Y.Seki
MS5F 5432
2 14
a b c
H04-004-06
1. Outline Drawing ( Unit : mm )
4MBI75T-060
a 2. Equivalent circuit
[Inverter]
( ) shows reference dimension.
[Thermistor]
89
MS5F 5432
3 14
a b c
H04-004-03
3. Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Items Collector-Emitter voltage
Symbols VCES
Conditions Ic=1mA
Maximum Ratings 600
Units V
Gate-Emitter voltage
VGES
±20 V
Ic
Duty=100 %
75
Collector current
Ic pulse IF
1ms Duty=50 %
150 A 75
IF pulse
1ms 150
Collector Power Dissipation
Pc
1 device
178 W
Junction temperature
Tj
150 °C
Storage temperature
Tstg
-40~ +125 °C
a Isolation between terminal and copper base *1 voltage between thermistor and others *2
Viso
AC : 1min.
2500
V
Screw Torque
Mounting *3
-...
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