4MBI75T-060

SPECIFICATION Device Name : Type Name : Spec. No. : IGBT Module 4MBI75T-060 MS5F 5432 Apr. 23 ’03 S.Ogawa Apr. 23 ’03 T.Miyasaka Apr. - 23 - ’03 K.Yamada T.Fujihira Fuji Electric Co.,Ltd. Matsumoto Factory MS5F 5432 1 14 a b c H04-004-07 Revised Records Date Classification Ind. Apr. - 23- ’03 enactment Content Applied date Issued date Drawn Checked Approved T.Miyasaka K.Yamada T.Fujihira Oct. - 16- ’03 Revision a Added thermistor (P3/14, 4/14, 12/14) Y.Kobayashi T.Miyasaka K.Yamada Y.Seki Dec. - 10- ’03 Revision b Revised VCE(sat),VF (P4/14, 10/14, 12/14) Y.Kobayashi S.Miyashita K.Yamada Y.Seki Sep. - 07- ’04 Revision c Revised VF (P4/14, 12/14) Y.Kobayashi S.Miyashita K.Yamada Y.Seki MS5F 5432 2 14 a b c H04-004-06 1. Outline Drawing ( Unit : mm ) 4MBI75T-060 a 2. Equivalent circuit [Inverter] ( ) shows reference dimension. [Thermistor] 89 MS5F 5432 3 14 a b c H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ） Items Collector-Emitter voltage Symbols VCES Conditions Ic=1mA Maximum Ratings 600 Units V Gate-Emitter voltage VGES ±20 V Ic Duty=100 % 75 Collector current Ic pulse IF 1ms Duty=50 % 150 A 75 IF pulse 1ms 150 Collector Power Dissipation Pc 1 device 178 W Junction temperature Tj 150 °C Storage temperature Tstg -40~ +125 °C a Isolation between terminal and copper base *1 voltage between thermistor and others *2 Viso AC : 1min. 2500 V Screw Torque Mounting *3 -...