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1MBI1004F-120L-50

Fuji Electric

IGBT

http://www.fujielectric.com/products/semiconductor/ 1MBI100U4F-120L-50 IGBT MODULE (U series) 1200V / 100A / 1 in one p...


Fuji Electric

1MBI1004F-120L-50

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http://www.fujielectric.com/products/semiconductor/ 1MBI100U4F-120L-50 IGBT MODULE (U series) 1200V / 100A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Reverse voltage for FWD VR Forword current for FWD IF IF pulse Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5) 1ms 1ms 1 device Continuous 1ms AC : 1min. Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1200 ±20 150 100 300 200 50 100 540 1200 150 300 +150 -40~+125 2500 3.5 Units V V A W V A °C °C VAC Nm 1 1MBI100U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector...




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