IGBT
http://www.fujielectric.com/products/semiconductor/
1MBI100U4F-120L-50
IGBT MODULE (U series) 1200V / 100A / 1 in one p...
Description
http://www.fujielectric.com/products/semiconductor/
1MBI100U4F-120L-50
IGBT MODULE (U series) 1200V / 100A / 1 in one package
IGBT Modules
Features
High speed switching Voltage drive Low Inductance module structure
Applications
Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Conditions
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Reverse voltage for FWD
VR
Forword current for FWD
IF IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2) Terminals (*3)
-
Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1ms
1ms 1 device Continuous 1ms
AC : 1min.
Tc=25°C Tc=80°C Tc=25°C Tc=80°C
Maximum ratings 1200 ±20 150 100 300 200 50 100 540 1200 150 300 +150
-40~+125 2500
3.5
Units V V
A
W V A °C °C VAC Nm
1
1MBI100U4F-120L-50
IGBT Modules http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector...
Similar Datasheet
- 1MBI1004F-120L-50 IGBT - Fuji Electric