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7MBP100VDA120-50 Dataheets PDF



Part Number 7MBP100VDA120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 7MBP100VDA120-50 Datasheet7MBP100VDA120-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 7MBP100VDA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 100A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings .

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http://www.fujielectric.com/products/semiconductor/ 7MBP100VDA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 100A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified) Items Symbol Min. Collector-Emitter Voltage (*1) VCES 0 Short Circuit Voltage VSC 400 DC IC - Inverter Collector Current 1ms Icp - Duty=89% (*2) -IC - Collector Power Dissipation 1 device (*3) PC - Brake Collector Current DC 1ms IC Icp - Forward Current of Diode IF - Collector Power Dissipation 1 device (*3) PC - Supply Voltage of Pre-Driver (*4) VCC -0.5 Input Signal Voltage (*5) Vin -0.5 Alarm Signal Voltage (*6) VALM -0.5 Alarm Signal Current (*7) IALM - Junction Temperature Tj - Operating Case Temperature Topr -20 Storage Temperature Tstg -40 Solder Temperature (*8) Tsol - Isolating Voltage (*9) Viso - Screw Torque Terminal (M4) Mounting (M4) - - Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N. Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100 Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake) Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13. Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13. Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13. Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19. Note *8: Immersion time 10±1sec. 1time. Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test. Max. 1200 800 100 200 100 417 50 100 50 250 20 VCC+0.5 VCC 20 150 110 125 260 AC2500 1.7 Units V V A A A W A A A W V V V mA ºC ºC ºC ºC Vrms Nm 1 7MBP100VDA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Inverter Brake Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified) Items Collector Current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector Current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Switching time Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr Conditions VCE=1200V IC=100A IF=100A VCE=1200V IC=50A IC=50A Terminal Chip Terminal Chip Terminal Chip Terminal Chip VDC=600V, Tj=125ºC, IC=100A VDC=600V, IC=100A Supply current of P-side pre-driver (per one unit) Iccp Supply current of N-side pre-driver Iccn Input signal threshold voltage Vinth(on) Vinth(off) Over Current Protection Level Inverter Brake IOC Over Current Protection Delay time tdOC Short Circuit Protection Delay time tSC IGBT Chips Over Heating Protection Temperature Level TjOH Over Heating Protection Hysteresis TjH Under Voltage Protection Level VUV Under Voltage Protection Hysteresis VH tALM(OC) Alarm Signal Hold Time tALM(UV) tALM(TjOH) Resistance for current limit RALM Switching Frequency= 0-15kHz TC=-20~110ºC Vin-GND ON OFF Tj=125ºC Tj=125ºC Tj=125ºC Surface of IGBT Chips ALM-GND TC=-20~110ºC VCC 10V Min. 1.1 - - 1.2 1.5 150 75 150 11.0 0.2 1.0 2.5 5.0 960 Typ. 1.70 2.10 1.70 2.40 - - 1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265 Max. 1.0 2.40 2.70 1.0 2.15 2.95 2.1 0.3 21 87 1.6 1.9 3 12.5 2.4 4.9 11.0 1570 Units mA V V V V mA V V V V µs µs µs mA mA V V A A µs µs ºC ºC V V ms ms ms Ω Thermal Characteristics (TC = 25ºC) Items Junction to Case Thermal Resistance (*10) Inverter Brake IGBT FWD IGBT FWD Case to Fin Thermal Resistance with Compound Note *10: For 1device, the measurement point of the case is just under the chip. Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)Q Rth(j-c)D Rth(c-f) Noise Immunity (VDC=600V, VCC=15V) Items Conditions Common mode rectangular noise Pulse width 1μs, polarity ±, 10 min. Judge : no over-current, no miss operating Min. - Min. ±2.0 Typ. - 0.05 Typ. - Max. 0.30 0.52 0.50 0.95 - Max. - Units °C/W °C/W °C/W °C/W °C/W Units kV Recommended Operating Conditions Items DC Bus Voltage Power Supply Voltage of Pre-Driver Symbol VDC VCC Switching frequency of IPM fSW Arm shoot through blocking time for IPM's input signal tdead Screw Torque (M4) - Min. Typ. Max. Units - - 800 V 13.5 15.0 16.5 V - - 20 kHz 1.0 - - µs 1.3 - 1.7 Nm 2 7MBP100VDA120-50 Block Diagram VccU ④ VinU ③ ALMU ② GNDU ① VccV ⑧ VinV ⑦ ALM V ⑥ GNDV ⑤ VccW ⑫ VinW ⑪ ALM W ⑩ GNDW ⑨ Vcc ⑭ VinX ⑯ RALM RALM RALM GND ⑬ VinY ⑰ VinZ ⑱ VinDB ⑮ ALM ⑲ RALM Pre-Driver Pre-Driver Pre-Driver Pre-Driver IGBT Modules http://www.fujielectric.com/products/semiconductor/ P U V W Pre-Driv.


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