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6MBP10VAA120-50 Dataheets PDF



Part Number 6MBP10VAA120-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 6MBP10VAA120-50 Datasheet6MBP10VAA120-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 6MBP10VAA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 10A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (T.

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http://www.fujielectric.com/products/semiconductor/ 6MBP10VAA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 10A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified) Items Symbol Min. Collector-Emitter Voltage (*1) VCES 0 Short Circuit Voltage VSC 400 DC IC - Collector Current 1ms Icp - Duty=89% (*2) -IC - Collector Power Dissipation 1 device (*3) PC - Supply Voltage of Pre-Driver (*4) VCC -0.5 Input Signal Voltage (*5) Vin -0.5 Alarm Signal Voltage (*6) VALM -0.5 Alarm Signal Current (*7) IALM - Junction Temperature Tj - Operating Case Temperature Topr -20 Storage Temperature Tstg -40 Solder Temperature (*8) Tsol - Isolating Voltage (*9) Viso - Screw Torque Mounting (M4) - - Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N. Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100 Note *3: PC=125ºC/Rth(j-c)Q Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 6 and 4, 9 and 7,11 and 10. Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7,12~14 and 10. Note *6: VALM shall be applied to the voltage between terminal No.15 and 10. Note *7: IALM shall be applied to the input current to terminal No.15. Note *8: Immersion time 10±1sec. 1time Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test. Max. 1200 800 10 20 10 97 20 VCC+0.5 VCC 20 150 110 125 260 AC2500 1.7 Units V V A A A W V V V mA ºC ºC ºC ºC Vrms Nm 1 6MBP10VAA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Inverter Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified) Items Collector Current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Switching time Symbol ICES VCE(sat) VF ton toff trr Conditions VCE=1200V IC=10A IF=10A Terminal Chip Terminal Chip VDC=600V, Tj=125ºC, IC=10A VDC=600V, IC=10A Supply current of P-side pre-driver (per one unit) Iccp Supply current of N-side pre-driver Iccn Input signal threshold voltage Vinth(on) Vinth(off) Over Current Protection Level IOC Over Current Protection Delay time tdOC Short Circuit Protection Delay time tSC IGBT Chips Over Heating Protection Temperature Level TjOH Over Heating Protection Hysteresis TjH Under Voltage Protection Level VUV Under Voltage Protection Hysteresis VH tALM(OC) Alarm Signal Hold Time tALM(UV) tALM(TjOH) Resistance for current limit RALM Switching Frequency= 0-15kHz TC=-20~110ºC Vin-GND ON OFF Tj=125ºC Tj=125ºC Tj=125ºC Surface of IGBT Chips ALM-GND TC=-20~110ºC VCC 10V Min. 1.1 - - 1.2 1.5 15 150 11.0 0.2 1.0 2.5 5.0 960 Typ. 1.68 2.10 - - 1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265 Max. 1.0 2.05 2.55 2.1 0.3 8 18 1.6 1.9 3 12.5 2.4 4.9 11.0 1570 Units mA V V V V µs µs µs mA mA V V A µs µs ºC ºC V V ms ms ms Ω Thermal Characteristics (TC = 25ºC) Items Junction to Case Thermal Resistance (*10) Inverter IGBT FWD Case to Fin Thermal Resistance with Compound Note *10: For 1device, the measurement point of the case is just under the chip. Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Noise Immunity (VDC=600V, VCC=15V) Items Conditions Common mode rectangular noise Pulse width 1μs, polarity ±, 10 min. Judge : no over-current, no miss operating Min. - Min. ±2.0 Typ. - 0.05 Typ. - Max. 1.28 2.02 - Max. - Units °C/W °C/W °C/W Units kV Recommended Operating Conditions Items DC Bus Voltage Power Supply Voltage of Pre-Driver Switching frequency of IPM Arm shoot through blocking time for IPM's input signal Screw Torque (M4) Symbol VDC VCC fSW tdead - Min. Typ. Max. Units - - 800 V 13.5 15.0 16.5 V - - 20 kHz 1.0 - - µs 1.3 - 1.7 Nm 2 6MBP10VAA120-50 Block Diagram VccU ③ VinU ② GNDU ① VccV ⑥ VinV ⑤ GNDV ④ VccW ⑨ VinW ⑧ GNDW ⑦ Vcc ⑪ VinX ⑫ VinY ⑬ VinZ ⑭ GND ⑩ ALM ⑮ RALM Pre-Driver Pre-Driver Pre-Driver IGBT Modules http://www.fujielectric.com/products/semiconductor/ P U V W Pre-Driver N Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 3 IOC 6MBP10VAA120-50 Characteristics (Representative) Tj VCC VCC VCC VCC VCC VCC Vinth(on), Vinth(off) [V] IGBT Modules http://www.fujielectric.com/products/semiconductor/ TC Vinth(off) Vinth(on) VCC VH VUV tALM Tj tALM(TjOH) Tj TjOH, TjH vs. VCC (typ.) TjOH TjOH TjH tALM(OC) VCC 4 TjH VCC 6MBP10VAA120-50 Inverter Tj VCC VCC VCC IGBT Modules http://www.fujielectric.com/products/semicond.


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