SBC846ALT1G

BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC848 VCEO Vdc 65 45 30 Collector−Base Voltage BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC848 VCBO Vdc 80 50 30 Emitter−Base Voltage BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC848 VEBO Vdc 6.0 6.0 5.0 Collector Current − Continuous IC 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 417 °C/W Junction an...