IGBT MODULE
SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 2MBI150U4B-120
Spec. No. :
MS5F 6059
Mar. 09 ’05 S.Miyashita M...
Description
SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 2MBI150U4B-120
Spec. No. :
MS5F 6059
Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6059
1 13
H04-004-07b
Revised Records
Date
Classification
Ind.
Mar.-09 -’05 Enactment
Content
Applied date
Drawn
Checked Checked Approved
Issued date
T.Miyasaka K.Yamada Y.Seki
MS5F6059
2 13
H04-004-06b
1. Outline Drawing ( Unit : mm )
2MBI150U4B-120
2. Equivalent circuit
MS5F6059
3 13
H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
It em s
Symbols
Conditions
Collector-Emitter voltage Gate-Emitter voltage
VCES VGES
Ic
Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
Viso
AC : 1min.
Screw Mounting (*2) Torque Terminals (*2)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Tc=25oC Tc=80oC Tc=25oC Tc=80oC
Max i m u m
Ratings 1200 ±20 200 150 400 300 150 300 780 +150
-40 to +125
Units V V
A
W oC
2500
VAC
3.5 N m
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics min. typ. max.
Zero gate voltage collector current
ICES
VCE=1200V VGE=0V
- - 2.0
Gate-Emitter leakage current
IGES
VCE=0V VGE=±20V
- - 400
Gate-Emitter threshold volta...
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