2MBI150U4H-170

SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI150U4H-170 Spec. No. : MS5F 6144 Jun. 01 ’05 S.Miyashita Jun. 01 ’05 T.Miyasaka K.Yamada Y.Seki MS5F6144 1 13 a H04-004-07b Revised Records Date Classification Ind. Jun.-01 -’05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T.Miyasaka K.Yamada Y.Seki Oct.-25-’05 Revision a Revised characteristics VCE(sat) (P4/13) S.Miyashita O.Ikawa K.Yamada T.Miyasaka MS5F6144 2 13 a H04-004-06b 1. Outline Drawing ( Unit : mm ) 2MBI150U4H-170 2. Equivalent circuit MS5F6144 3 13 a H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ） It em s Sym bols Conditions Collector-Emitter voltage VCES Gate-Emitter voltage VGES Ic Continuous Tc=25°C Tc=80°C Collector current Icp 1ms -Ic Tc=25°C Tc=80°C -Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min. Screw Mounting (*2) Torque Terminals (*3) - (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) (*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6) Max i m u m Ratings 1700 ±20 200 150 400 300 150 300 780 150 -40 ~ +125 Units V V A W °C 3400 VAC 3.5 4.5 Nm 4. Electrical characteristics ( at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate ...