SBAW56LT3G

BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G Dual Switching Diode Common Anode Features AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) VR IF IFM(surge) IFSM 70 200 500 4 V mA mA A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board PD 225 mW (Note 1) TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 3. Square Wave; Tj = 25°C. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniqu...