K3652

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen ■ Features Low on-resistance, low Qg High avalanche resistance ■ Applications For PDP For high-speed switching ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * VDSS VGSS ID IDP EAS 230 ±30 50 200 2 200 V V A A mJ Power dissipation Junction temperature Storage temperature Ta = 25°C PD Tj Tstg 100 3 150 −55 to +150 W °C °C Note) *: L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C 18.6±0.5stage.dc (2.0) Solder Dip 26.5±0.5e/ (2.0) (1.2) (10.0) (4.5) (23.4) 22.0±0.5 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.0) 2.0±0.2 5˚ 5˚ 5˚ 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 12 3 (2.0) 1: Gate 2: Drain 3: Source TOP-3E-A1 Package Marking Symbol: K3652 Internal Connection D G Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Drain-source surrender voltage VDSS Gate threshold voltage Vth Drain-source cutoff current IDSS Gate-source cutoff current IGSS Drain-source ON resistance RDS(on) Forward trans...