Silicon MOSFET
2SK3559
N-channel enhancement mode MOSFET
High speed switching
Absolute Maximum Ratings
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Allowable power Tc = 25 °C *1
dissipation
Ta = 25 °C *2
Junction temperature
Storage temperature
Symbol VDSS VGSS ID IDP PD PD Tj Tstg
Rating 230
30 30 120 100 ...
