DatasheetsPDF.com

FGA50S110P

Fairchild Semiconductor

50A Shorted-anode IGBT

FGA50S110P — 1100 V, 50 A Shorted-anode IGBT FGA50S110P 1100 V, 50 A Shorted-anode IGBT August 2013 Features • Intrin...



FGA50S110P

Fairchild Semiconductor


Octopart Stock #: O-918014

Findchips Stock #: 918014-F

Web ViewView FGA50S110P Datasheet

File DownloadDownload FGA50S110P PDF File







Description
FGA50S110P — 1100 V, 50 A Shorted-anode IGBT FGA50S110P 1100 V, 50 A Shorted-anode IGBT August 2013 Features Intrinsic Anti-parallel Diode for Soft-switching Applications High Switching Frequency Range 10 kHz to 50kHz High Temperature Stable Behavior (Tjmax = 175oC) Low Saturation Voltage Drop : VCE(sat) = 2.06 V @ IC = 50 A Robust Pot Detection Noise Immunity RoHS Compliant (Pb-free lead plating) Applications Induction Cooker, Rice-jar, and Microwave Oven Soft-switching Applications General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. This device is tailored to induction cooker and microwave oven. C G CE TO-3PN Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: 1: Limited by Tjmax Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max G E Ra...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)