NGTB30N60IHLWG

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices Typical Applications Inductive Heating Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 150 A IF A 60 30 Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range IFM 150 A VGE $20 V PD W 250 50 TJ −55 to +150 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +150 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage ...