NGTB35N60FL2WG

NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Solar Inverters Uninterruptible Power Supplies (UPS) Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 70 35 Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 70 35 Diode Pulsed Current TPULSE Limited by TJ Max Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C Gate−emitter voltage Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range IFM 120 A ICM 120 A tSC 5 ms VGE $20 V $30 V PD W 300 150 TJ −55 to +175 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +175 ...