PHOTOTRANSISTOR
L-93DP3C
Features
!MECHANICALLY AND SPECTRALLY MATCHED TO THE INFRARED EMITTING LED LAMP. !WATER CLEAR ...
PHOTO
TRANSISTOR
L-93DP3C
Features
!MECHANICALLY AND SPECTRALLY MATCHED TO THE INFRARED EMITTING LED LAMP. !WATER CLEAR LENS.
Description
P3 Made with
NPN silicon photo
transistor chips.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.
SPEC NO: DSAC1289 APPROVED : J. Lu
REV NO: V.1 CHECKED : Allen Liu
DATE: DEC/06/2002 DRAWN: D.L.HUANG
PAGE: 1 OF 2
Electrical \ Radiant Characteristics at TA=25°C
Symbol
Parameter
Min.
V BRCEO Collector-to-Emitter Breakdown Voltage V BRECO Emitter-to-Collector Breakdown Voltage V CE (SAT) Collector-to-Emitter Saturation Voltage
I CEO Collector Dark Current
TR Rise Time (10% to 90%)
TF CCB λSMAX
Fall Time (90% to 10%) Collector-base Capacitance Wavelength of the max sensitivity
30 5 -
I (ON) On State Collector Current
0.2
Typ.
3 3 6.4 940
0.6
Max. -
0.8 100
-
-
Unit
V V V nA us us pF nm
mA
Test Condiction
I C=100uA, Ee=0mW/cm2
I E=100uA, Ee=0mW/cm2
I C=2mA, Ee=20mW/cm2
VCE=10V, Ee=0mW/cm2
V CE=5V, I C=1mA, R L=1000Ω
F=1MHZ VCB =3V
VCE=5V, Ee=1mW/cm2,
λ=940nm
Absolute Maximum Ratings at TA=25°C
Parameter
Power dissipation Operating Temperature Range Storage Temperature Range Lead Solder Temperature [1] Note: 1. 2mm below package base.
Maximum Rating
100mW -40°C To +85°C -40°C To +85°C 260°C For 5 Seconds
SPEC NO: DSAC1289 APPROVED : J...