BR3DG9014W

9014W(BR3DG9014W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package. / Features PC ,hFE , 9015W(BR3CG9015W)。 High PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W). / Applications 、。 Low frequency, low noise pre-amplifier. / Equivalent Circuit / Pinning 3 21 PIN1：Emitter PIN 2：Base PIN 3：Collector / Marking hFE Classifications Symbol hFE Range Marking A 60～150 HJ6A B 100～300 HJ6B C 200～600 HJ6C D 400～1000 HJ6D http://www.fsbrec.com 1/6 9014W(BR3DG9014W) Rev.C Feb.-2015 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rating 50 45 5.0 100 250 150 -55～150 Unit V V V mA mW ℃ ℃ / Electrical Characteristics(Ta=25℃) Parameter Symbol Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage VCBO VCEO IC=0.1mA IC=1.0mA IE=0 IB=0 Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0 Collector Cut-Off Current ICBO VCB=50V IE=0 Emitter Base Cut-Off Current IEBO VEB=5.0V IC=0 DC Current Gain hFE VCE=5.0V IC=1.0mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA IB=5.0mA Base-Emitter Saturation Voltage VBE(sat) IC=100mA IB=5.0mA Collector-Emitter Voltage VBE VCE=5.0V IC=2.0mA Transi...