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A1432

Toshiba Semiconductor
Part Number A1432
Manufacturer Toshiba Semiconductor
Description 2SA1432
Published May 10, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1432 High Voltage Control Applications Plasma Display, Ni...
Datasheet PDF File A1432 PDF File

A1432
A1432

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications 2SA1432 Unit: mm • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.
5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.
) • Complementary to 2SC3672 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −300 −300 −8 −10...


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