TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications Medium Power Amplifier App...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications Medium Power Amplifier Applications
2SA1430
Unit: mm
High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB PC Tj Tstg
−20 −20 −10 −6 −2
−4
−2 1000 150 −55 to 150
V V V
A
A mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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