Document
Reflective Photosensors (Photo Reflectors)
CNB1304H (ON2175)
Reflective photosensor
Tape end sensor for DAT
■ Overview CNB1304H is a sensor which consists of a high efficiency GaAs
infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direction. It detects the beginning and end of a tape based on changes in the amount of light reflected from a prism which is situated outside of the sensor.
■ Features • Fast response • Small size and light weight
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage emitting diode) Forward current
Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open)
VR IF PD VCEO
3 50 75 30
V mA mW V
Emitter-collector voltage VECO (Base open)
5
V
Collector current
IC 20 mA
Collector power dissipation *2 PC
100 mW
Temperature Operating ambient temperature Topr −20 to +85 °C
Storage temperature
Tstg −30 to +100 °C
8.3±0.3 6.0±0.15
(R2.3) 4.0±0.3
φ2.2±0.3 2-φ1.2±0.15 (4-R0.3)
Unit: mm
6.5±0.3
+0 -0.3
5.0
3.75±0.15
8.0
+0 -0.3
7.0±0.3
(C0.3)
2-φ1.2±0.15
4.0±0.3
5.0 min. 7±0.3 1.0±0.3 (C0.2)
φ1.2+−00.3 2-0.4±0.2 (3.75)
3.0±0.3
2-0.15
+0.2 -0.1
(3.75)
42
1: Anode
2: Cathode
31
3: Collector
4: Emitter
PRSTR104-005 Package
(Note) ( ) Dimension is reference
Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Forward voltage
VF
characteristics Reverse current
IR
Output
Collector-emitter cutoff current ICEO
characteristics (Base open)
Transfer Collector current *1
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time
tr
Fall time
tf
IF = 50 mA VR = 3 V VCE = 10 V
VCE = 5 V, IF = 20 mA IF = 50 mA, IC = 0.1 mA VCC = 10 V, IC = 0.5 mA, RL = 100 Ω
100
1.5 V 10.0 µA 200 nA
1 500 µA 0.5 V
6 µs 6
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: IC measurement circuit (Unit: mm) 2.5 11
CNB1304H
2- 1.5
prism
*2: Switching time measurement circuit
Sig. in 50 Ω
VCC
Sig. out RL
(Input pulse) (Output pulse)
90% 10% tr tf
tr: Rise time tf: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00049BED
1
Caution for Safety
DANGER
■ This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtain.
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