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CNB1304H Dataheets PDF



Part Number CNB1304H
Manufacturers Panasonic
Logo Panasonic
Description Reflective photosensor
Datasheet CNB1304H DatasheetCNB1304H Datasheet (PDF)

Reflective Photosensors (Photo Reflectors) CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT ■ Overview CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direction. It detects the beginning and end of a tape based on changes in the amount of light reflected from a prism which is situated outside of the sensor. ■ Features • Fast response • Small size and lig.

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Reflective Photosensors (Photo Reflectors) CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT ■ Overview CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direction. It detects the beginning and end of a tape based on changes in the amount of light reflected from a prism which is situated outside of the sensor. ■ Features • Fast response • Small size and light weight ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Input (Light Reverse voltage emitting diode) Forward current Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) VR IF PD VCEO 3 50 75 30 V mA mW V Emitter-collector voltage VECO (Base open) 5 V Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Temperature Operating ambient temperature Topr −20 to +85 °C Storage temperature Tstg −30 to +100 °C 8.3±0.3 6.0±0.15 (R2.3) 4.0±0.3 φ2.2±0.3 2-φ1.2±0.15 (4-R0.3) Unit: mm 6.5±0.3 +0 -0.3 5.0 3.75±0.15 8.0 +0 -0.3 7.0±0.3 (C0.3) 2-φ1.2±0.15 4.0±0.3 5.0 min. 7±0.3 1.0±0.3 (C0.2) φ1.2+−00.3 2-0.4±0.2 (3.75) 3.0±0.3 2-0.15 +0.2 -0.1 (3.75) 42 1: Anode 2: Cathode 31 3: Collector 4: Emitter PRSTR104-005 Package (Note) ( ) Dimension is reference Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Input Forward voltage VF characteristics Reverse current IR Output Collector-emitter cutoff current ICEO characteristics (Base open) Transfer Collector current *1 IC characteristics Collector-emitter saturation voltage VCE(sat) Rise time tr Fall time tf IF = 50 mA VR = 3 V VCE = 10 V VCE = 5 V, IF = 20 mA IF = 50 mA, IC = 0.1 mA VCC = 10 V, IC = 0.5 mA, RL = 100 Ω 100 1.5 V 10.0 µA 200 nA 1 500 µA 0.5 V 6 µs 6 Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation 3. *1: IC measurement circuit (Unit: mm) 2.5 11 CNB1304H 2- 1.5 prism *2: Switching time measurement circuit Sig. in 50 Ω VCC Sig. out RL (Input pulse) (Output pulse) 90% 10% tr tf tr: Rise time tf: Fall time Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00049BED 1 Caution for Safety DANGER ■ This product contains Gallium Arsenide (GaAs). GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtain.



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