FTS2011

Ordering number:ENN6355 N-Channel Silicon MOSFET FTS2011 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2011] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 0.125 7 : Source 8 : Drain SANYO : TSSOP8 4.5 Conditions 6.4 Ratings 20 ±10 8 32 1.3 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 15 21 13 18 1950 550 370 17 26 Conditions Ratings min 20 1 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : S2011 Continued on next page. Any and all SANYO products described or contained herein ...