MOS INTEGRATED CIRCUIT
MONOLITHIC 6 channel H-BRIDGE DRIVER
µPD16857 is monolithic 6 channel H-bridge driver employing power MOS FETs in the output stages. The MOS
FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers
using bipolar transistors.
In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning
when the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim
In the output stage H bridge circuits, two low-ON resistance H-bridge circuits for driving actuators, and another
three channels for driving sled motors and tilt control, and another channel for driving loading motor are provided,
making the product ideal for applications in DVD-ROM/DVD-RAM.
• Six H-bridge outputs employing power MOS FETs.
• High speed PWM drive corresponding: Operating input frequency 120 kHz (MAX.)
• Low voltage malfunction prevention circuit: Operating control block voltage under 2.5 V (TYP.)
• Loading into 38-pin shrink SOP (300 mil).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Control block supply voltage
Output block supply voltage
Peak junction temperature
Storage temperature range
ID(pulse) PW ≤ 5 ms, Duty ≤ 20 %
–0.5 to +6.0
–0.5 to +13.5
–0.5 to VDD+0.5
–55 to +150
Note When mounted on a glass epoxy board (10 cm × 10 cm × 1 mm, 15 % copper foil)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. S13908EJ1V0DS00 (1st edition)
Date Published July 1999 N CP(K)
Printed in Japan