2SK3277-01L
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK3272-01...
Description
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK3272-01L,S
Trench Gate MOSFET
N-channel MOS-FET
60V 6,5mΩ ±80A 135W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage
V DS ID I D(puls) VGS
60 ±80 ±320 +30 / -20
Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range
E AV PD T ch T stg
613 135 150 -55 ~ +150
* L=0,13mH, VCC=24V
Unit V A A V
mJ* W °C °C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=40A
VGS=40V
Min. 60 2,5
Typ. Max.
3,0 1,0 10,0 10 5,0
3,5 100,0 500,0
100 6,5
Unit V V µA µA nA mΩ
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
g fs C...
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