CY15B104Q

CY15B104Q 4-Mbit (512 K × 8) Serial (SPI) F-RAM 4-Mbit (512 K × 8) Serial (SPI) F-RAM Features ■ 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI) ❐ Up to 40-MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array ■ Device ID ❐ Manufacturer ID and Product ID ■ Low power consumption ❐ 300 A active current at 1 MHz ❐ 100 A (typ) standby current ❐ 3 A (typ) sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C ■ Packages ❐ 8-pin small outline integrated circuit (SOIC) package ❐ 8-pin thin dual flat no leads (TDFN) package ■ Restriction of hazardous substances (RoHS) compliant Functional Description The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and sy...