STN4826
Dual N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
The STN4826 is the Dual N-Channel logic enhancement m...
STN4826
Dual N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
The STN4826 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
PIN CONFIGURATION SOP-8
FEATURE
60V/ 8.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V
60V/6.0A, RDS(ON) = 40mΩ @VGS = 4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
MARKING
Y: Year Code A: Porduce Code B: Process Code
1
120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4826 2013. V1
STN4826
Dual N Channel Enhancement Mode MOSFET
8.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
60
±20 8.0 6.0 20
2.0 2.0 1.3 -55/150
-55/150
75
Unit V V A A A W ℃ ℃ ℃/W
2
120 Bentley Square, Mountain View, Ca 94040 USA www...