CS13001

TO-92 Plastic-Encapsulate Transistors CS13001 TRANSISTOR (NPN) FEATURES power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) TO-92 Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 600 400 7 0.2 0.75 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) 1. EMITER 2. COLLECTOR 3. BASE 123 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT tf tS IC= 100μA , IE=0 IC= 1mA , IB=0 IE= 100μA, IC=0 VCB= 600V , IE=0 VCE= 400V, IB=0 VEB= 7V, IC=0 VCE= 20V, IC= 20mA VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 mA IC= 50 mA, IB= 10mA VCE= 20V, IC=20mA f = 1MHz 600 400 7 10 5 8 VCC=45V, IC=50mA IB1= -IB2=5mA V V V 100 μA 200 μA 100 μA 40 0.5 V 1.2 V MHz 0.3 μs 1.5 μs CLASSIFICATION OF hFE(1) Typical Characteristics CS13001 ...