SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1680
DESCRIPTION www.dat·aWshiethet4TuO....
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD1680
DESCRIPTION www.dat·aWshiethet4TuO.co-3mPFa package
·High speed switching
·High VCBO ·Large collector power dissipation
APPLICATIONS ·For horizontal deflection output
applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current (Pulse)
PC Collector power dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
Ta=25 TC=25
VALUE 330 200 6 7 10 3 70 150
-55~150
UNIT V V V A A
W
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD1680
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=5A; IB=0.5A VCE=330V; VBE=0 Ta=100 VEB=6V; IC=0
hFE DC current gain tf Fall time
IC=5A ; VCE=4V IC=5A IB1=0.8A,VEB=-5V,RB=0.5>
MIN TYP. MAX UNIT
200 V
330 V
1.0 V
1.2 V
1 15
mA
1 mA
15
0.75 µs
2
SavantIC Semiconductor
Silicon
NPN Power
Transistors
PACKAGE OUTLIN...