SEMICONDUCTOR
TECHNICAL DATA
KF7N65P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.2 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF7N65P KF7N65F
Drain-Source Voltage
VDSS
650
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
7 7* 4.2 4.2* 18 18*
212
1.6
4.5
Drain Power Dissipation
Tc=25 Derate above 25
PD
160 1.28
52 0.42
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.78
2.4
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
62.5
UNIT V V
A
mJ mJ V/ns W W/
/W /W /W
PIN CONNECTION
D
Q
K
KF7N65P
A
E
I K
M D
NN
F G
B Q
L J
O C
P H
123
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7
H 0.5+0.1/-0.05
I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 +_ 0.2 Q 9.2 +_ 0.2
TO-220AB
KF7N65F
AC
F O
E
LM D
NN 123
G B
J
R
H
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2
TO-220IS (1)
G
2008. 10 .2
S
Revision No : 1
1/7
KF7N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=650V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=3.5A
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS=520V, ID=7.0A VGS=10V
(Note4,5)
VDD=325V RL=46 RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current Pulsed Source Current
IS VGS