STI13NM60N

STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages TAB Features 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N 100% avalanche tested Low input capacitance and gate charge Low gate input resistance ID 11 A D(2, TAB) Applications Switching applications G(1) S(3) NG1D2TS3 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STF13NM60N STI13NM60N STP13NM60N STU13NM60N DS6112 - Rev 6 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current pulsed PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all t...