Document
N R N-CHANNEL MOSFET
JCS5N50VT/RT/CT/FT
MAIN CHARACTERISTICS
Package
ID 5 A
VDSS
500 V
Rdson(@Vgs=10V) 1.6Ω
Qg 15 nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 16pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 16pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS5N50VT-O-V-N-B JCS5N50RT-O-R-N-B JCS5N50CT-O-C-N-B JCS5N50FT-O-F-N-B
JCS5N50VT JCS5N50RT JCS5N50CT JCS5N50FT
Package
IPAK DPAK TO-220C TO-220MF
Halogen
Free NO NO NO NO
Packaging
Tube Tube Tube Tube
Device Weight 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter
- Drain-Source Voltage
Symbol
JCS5N50VT/RT
Value JCS5N50CT
VDSS
500
Drain Current -continuous
( 1)
ID T=25℃ T=100℃
5 3.16
Drain Current - pulse (note 1)
Gate-Source Voltage ( 2)
IDM VGSS
20 ±30
Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1)
EAS IAR
305 5
Repetitive Avalanche Current (note 1)
EAR
10.1
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
4.5
Power Dissipation
PD TC=25℃ -Derate
above 25℃
91 0.73
101 0.81
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
*
TL
300
*Drain current limited by maximum junction temperature
JCS5N50FT 500 5* 3.16* 20*
41 0.33
Unit V A A A V mJ A mJ
V/ns W
W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS5N50VT/RT/CT/FT
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
500 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.64 - V/℃
Zero Gate Voltage Drain Current
Gate-body leakage current, forward
IDSS IGSSF
VDS=500V,VGS=0V, TC=25℃ VDS=400V, TC=125℃
VDS=0V, VGS =30V
- - 1 μA - - 10 μA
- - 100 nA
Gate-body leakage current, reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
On-Characteristics
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
3.0 - 4.5 V
Static Drain-Source On-Resistance
RDS(ON) VGS =10V , ID=2.5A
- 1.33 1.6 Ω
Forward Transconductance
gfs
VDS = 40V, ID=2.5A(note 4) - 5.5 -
S
Dynamic Characteristics
Input capacitance
Ciss
Output capacitance
Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 492 633 pF - 83 110 pF
Reverse transfer capacitance
Crss
- 16 22 pF
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ELECTRICAL CHARACTERISTICS
Switching Characteristics
Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge
td(on) tr td(off) tf Qg Qgs Qgd
VDD=250V,ID=5A,RG=25Ω (note 4,5)
VDS =400V , ID=5A VGS =10V (note 4,5)
- 45 60 ns - 26 34 ns - 133 170 ns - 214 270 ns - 15 20 nC - 3.5 - nC - 6 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current
IS - - 5 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM - - 20 A
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=5A
- - 1.4 V
Reverse recovery time
trr VGS=0V, IS=5A
Reverse recovery charge
Qrr dIF/dt=100A/μs
THERMAL CHARACTERISTIC
(note 4)
- 268 - ns - 2.1 - μC
Parameter
Symbol
Max
Unit
JCS5N50VT/RT JCS5N50CT JCS5N50FT
Thermal Resistance, Junction to Case
Rth(j-c)
1.38
1.23 3.08 ℃/W
Thermal Resistance, Junction to Ambient Rth(j-A)
110
62.5 62.5 ℃/W
: 1: 2:L=22mH, IAS=5A, VDD=50V, RG=25 Ω,
TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS,
TJ=25℃ 4::≤300μs,≤2% 5:
Notes: 1:Pulse width limited by maximum junction temperature 2:L=22mH, IAS=5A, VDD=50V, RG=25 Ω,Starting
TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves)
ID [A]
On-Region Characteristics
10 Top
VGS 15V
10V
9V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Notes: 1 1. 250μs pulse test
2. TC=25℃
1 10
VD S [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8 2.6
VGS=10V
2.4
2.2
2.0
1.8
1.6
1.4
VGS=20V
Note :Tj=25℃
1.2
1.0 0 2 4 6 8 10 12 14 16
ID [A]
Capacitance Characteristics
ID R [A]
ID [A]
Transfer Characteristics
10
150℃
1
25℃
Notes: 1.250μs pulse test 2.VDS=40V
0.1 2 4 6 8 10
VG S [V]
Body Diode Forward Voltage Variation vs. Source Current and Temperature
10
150℃
1
25℃
Notes: 1. 250μs pulse test 2. VGS=0V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VS D [V]
Gate Charge Characteristics
RD S (on) [ Ω ]
VG S Gate Source Voltage[V]
12
VDS=400V 10 VDS=250V 8 VDS=100V
6
4
2
0 0 10
Qg Toltal Gate Charge [nC]
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ELECTRICAL CHARACTERISTICS (curves)
BV D S (Normalized)
Breakdown Voltage Variation vs..