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JCS5N50VT Dataheets PDF



Part Number JCS5N50VT
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS5N50VT DatasheetJCS5N50VT Datasheet (PDF)

N R N-CHANNEL MOSFET JCS5N50VT/RT/CT/FT MAIN CHARACTERISTICS Package ID 5 A VDSS 500 V Rdson(@Vgs=10V) 1.6Ω Qg 15 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 16pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 16pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS5N50VT-O-V-N-B JCS5N50RT-O-R-.

  JCS5N50VT   JCS5N50VT


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N R N-CHANNEL MOSFET JCS5N50VT/RT/CT/FT MAIN CHARACTERISTICS Package ID 5 A VDSS 500 V Rdson(@Vgs=10V) 1.6Ω Qg 15 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 16pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 16pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS5N50VT-O-V-N-B JCS5N50RT-O-R-N-B JCS5N50CT-O-C-N-B JCS5N50FT-O-F-N-B JCS5N50VT JCS5N50RT JCS5N50CT JCS5N50FT Package IPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO Packaging Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) :200911A 1/12 R JCS5N50VT/RT/CT/FT ABSOLUTE RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Symbol JCS5N50VT/RT Value JCS5N50CT VDSS 500 Drain Current -continuous ( 1) ID T=25℃ T=100℃ 5 3.16 Drain Current - pulse (note 1) Gate-Source Voltage ( 2) IDM VGSS 20 ±30 Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) EAS IAR 305 5 Repetitive Avalanche Current (note 1) EAR 10.1 ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt 4.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 91 0.73 101 0.81 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering Purposes * TL 300 *Drain current limited by maximum junction temperature JCS5N50FT 500 5* 3.16* 20* 41 0.33 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :200911A 2/12 R ELECTRICAL CHARACTERISTICS JCS5N50VT/RT/CT/FT Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics - Drain-Source Voltage BVDSS ID=250μA, VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.64 - V/℃ Zero Gate Voltage Drain Current Gate-body leakage current, forward IDSS IGSSF VDS=500V,VGS=0V, TC=25℃ VDS=400V, TC=125℃ VDS=0V, VGS =30V - - 1 μA - - 10 μA - - 100 nA Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 3.0 - 4.5 V Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=2.5A - 1.33 1.6 Ω Forward Transconductance gfs VDS = 40V, ID=2.5A(note 4) - 5.5 - S Dynamic Characteristics Input capacitance Ciss Output capacitance Coss VDS=25V, VGS =0V, f=1.0MHZ - 492 633 pF - 83 110 pF Reverse transfer capacitance Crss - 16 22 pF :200911A 3/12 R JCS5N50VT/RT/CT/FT ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge td(on) tr td(off) tf Qg Qgs Qgd VDD=250V,ID=5A,RG=25Ω (note 4,5) VDS =400V , ID=5A VGS =10V (note 4,5) - 45 60 ns - 26 34 ns - 133 170 ns - 214 270 ns - 15 20 nC - 3.5 - nC - 6 - nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current IS - - 5 A Maximum Pulsed Drain-Source Diode Forward Current ISM - - 20 A Drain-Source Diode Forward Voltage VSD VGS=0V, IS=5A - - 1.4 V Reverse recovery time trr VGS=0V, IS=5A Reverse recovery charge Qrr dIF/dt=100A/μs THERMAL CHARACTERISTIC (note 4) - 268 - ns - 2.1 - μC Parameter Symbol Max Unit JCS5N50VT/RT JCS5N50CT JCS5N50FT Thermal Resistance, Junction to Case Rth(j-c) 1.38 1.23 3.08 ℃/W Thermal Resistance, Junction to Ambient Rth(j-A) 110 62.5 62.5 ℃/W : 1: 2:L=22mH, IAS=5A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5: Notes: 1:Pulse width limited by maximum junction temperature 2:L=22mH, IAS=5A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature :200911A 4/12 R JCS5N50VT/RT/CT/FT ELECTRICAL CHARACTERISTICS (curves) ID [A] On-Region Characteristics 10 Top VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Notes: 1 1. 250μs pulse test 2. TC=25℃ 1 10 VD S [V] On-Resistance Variation vs. Drain Current and Gate Voltage 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 VGS=10V 2.4 2.2 2.0 1.8 1.6 1.4 VGS=20V Note :Tj=25℃ 1.2 1.0 0 2 4 6 8 10 12 14 16 ID [A] Capacitance Characteristics ID R [A] ID [A] Transfer Characteristics 10 150℃ 1 25℃ Notes: 1.250μs pulse test 2.VDS=40V 0.1 2 4 6 8 10 VG S [V] Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 150℃ 1 25℃ Notes: 1. 250μs pulse test 2. VGS=0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VS D [V] Gate Charge Characteristics RD S (on) [ Ω ] VG S Gate Source Voltage[V] 12 VDS=400V 10 VDS=250V 8 VDS=100V 6 4 2 0 0 10 Qg Toltal Gate Charge [nC] :200911A 5/12 R JCS5N50VT/RT/CT/FT ELECTRICAL CHARACTERISTICS (curves) BV D S (Normalized) Breakdown Voltage Variation vs..


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