IRF530N

Data Sheet January 2002 IRF530N 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE) IRF530N D G S Features Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Ordering Information PART NUMBER PACKAGE IRF530N TO-220AB BRAND IRF530N Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF530N UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous Continuous (TC= (TC= 12500oCoC, V, VGGSS==101V0V) )(F(Figiugruere2)2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS 100 100 ±20 22 15 Figure 4 Figures ...