TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2069
High-Speed Switching Applications DC-DC Converter Applications
2S...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type
2SA2069
High-Speed Switching Applications DC-DC Converter Applications
2SA2069
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = −0.15 A) Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) High-speed switching: tf = 37 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
t = 10 s DC
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC (Note 1)
Tj Tstg
−20 −20 −7 −1.5 −2.5 −150 2.0 1.0 150 −55 to 150
V V V
A
mA
W
°C °C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2006-11-09
Electrical Characteristics (Ta = 25°C)...