2SA2029-R

Small Signal Product PNP Bipolar Transistor 2SA2029-Q/R/S Taiwan Semiconductor FEATURES - Epitaxial planar die construction - Surface Mount Device Type - Moisture sensitivity level 1 - For high voltage switcing and amplifier application - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Excellent hFE linearity - Complements the 2SC5658 SOT-723 MECHANICAL DATA - Case: SOT-723 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 1.27mg +/- 20% 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL LIMIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg -60 -50 -6 -150 150 150 -55 to + 150 UNIT V V V mA mW °C °C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Currect Emitter Cut-Off Currect DC Current Transfer Ration Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance Remark: Classifiaction of hFE Rank Range Q 120~270 R 180~390 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob MIN -60 -50 -6 120 TYP 140 MAX -0.1 -0.1 560 -0.5 5 TEST...