STP30NM60ND

STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P■ The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le■ 100% avalanche tested o■ Low input capacitance and gate charge bs■ Low gate input resistance O■ Extremely high dv/dt and avalanche -capabilities ct(s)Application du■ Switching applications ProDescription teThe FDmesh™ II series belongs to the second legeneration of MDmesh™ technology. This orevolutionary Power MOSFET associates a new svertical structure to the company's strip layout band associates all advantages of reduced onOresistance and fast switching with an intrinsic fast- I2PAK 123 TO-247 3 2 1 3 D2PAK 1 TO-220 3 2 1 3 2 TO-220FP 1 Figure 1. Internal schematic diagram $ ' 3 !-V It is therefore strongly recommended for bridge recovery body diode. topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 30NM60ND 30NM60ND 30NM60ND 30NM60ND 30NM60ND D²PAK I²PAK TO-220FP TO-220 TO-247 Tape and reel Tube Tube Tube Tube November 2008 Rev 2 1/18 www.st.com 18 Contents Contents STx30NM60ND 1 Electrical r...