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VS-10CTQ150-1PbF

Vishay

High Performance Schottky Rectifier

www.vishay.com VS-10CTQ150SPbF, VS-10CTQ150-1PbF Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A V...


Vishay

VS-10CTQ150-1PbF

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Description
www.vishay.com VS-10CTQ150SPbF, VS-10CTQ150-1PbF Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A VS-10CTQ150SPbF VS-10CTQ150-1PbF Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode D2PAK 2 1 Common 3 Anode cathode Anode TO-262 FEATURES 175 °C TJ operation Center tap configuration Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS D2PAK, TO-262 2x5A 150 V 0.93 V 7 mA at 125 °C 175 °C Common cathode 5 mJ DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.  MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 5 Apk, TJ = 125 °C (per leg) Range VALUES 10 150 620 0.73 -55 to +175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum wo...




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