PD - 96197
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Te...
PD - 96197
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (ON) Trench IGBT Technology Low switching losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA Square RBSOA
100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
C
G E
n-channel
Benefits
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation Low EMI
IRGS4056DPbF
VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.55V
C E
C G D2Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current
cClamped Inductive Load Current
Diode Continous Forward Current Diode Continous Forward Current
eDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (...