Document
STF19NM50N, STP19NM50N, STW19NM50N
N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
3 2 1
TO-220FP
TAB
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
Features
Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N
RDS(on) max 0.25 Ω
ID 14 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
• Switching applications
'7$% *
6
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Order codes STF19NM50N STP19NM50N STW19NM50N
Table 1. Device summary
Marking
Packages
TO-220FP
19NM50N
TO-220
TO-247
Packaging Tube
September 2013
This is information on a product in full production.
DocID17079 Rev 2
1/18
www.st.com
Contents
Contents
STF19NM50N, STP19NM50N, STW19NM50N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 DocID17079 Rev 2
STF19NM50N, STP19NM50N, STW19NM50N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
TO-220
Value Unit
TO-247 TO-220FP
VDS VGS ID ID IDM (2) PTOT dv/dt (3)
Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope
500 ± 25 14 10 56 110 15
14 (1) 10 (1) 56 (1)
30
V V A A A W V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature Tj Max. operating junction temperature
- 55 to 150 150
1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤ 14 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
2500
V
°C °C
Table 3. Thermal data
Symbol
Parameter
TO-220
Value Unit
TO-247 TO-220FP
Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max
1.14 62.5 50
4.17 °C/W 62.5 °C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
IAR
Avalanche current, repetitive or not-repetitive (pulse width lim.