DatasheetsPDF.com

ISL9V5045S3ST

Fairchild Semiconductor

EcoSPARK N-Channel Ignition IGBT

ISL9V5045S3ST N-Channel Ignition IGBT November 2009 ISL9V5045S3ST EcoSPARK® N-Channel Ignition IGBT 500mJ, 450V Featu...


Fairchild Semiconductor

ISL9V5045S3ST

File Download Download ISL9V5045S3ST Datasheet


Description
ISL9V5045S3ST N-Channel Ignition IGBT November 2009 ISL9V5045S3ST EcoSPARK® N-Channel Ignition IGBT 500mJ, 450V Features „ SCIS Energy = 500mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Ignition Coil Driver Circuits „ Coil - On Plug Applications General Description The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external components. EcoSPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Package GATE EMITTER COLLECTOR (FLANGE) JEDEC TO-263AB D2-Pak Symbol GATE R1 R2 COLLECTOR EMITTER ISL9V5045S3ST Rev. A1 1 www.fairchildsemi.com ISL9V5045S3ST N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy Collector Current Continuous, At TC = 25°C, See Fig 9 Collector Current Continuous, At TC = 110°C, See Fig 9 Gate to Emitter Voltage Continuous Powe...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)