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HY5N50T Dataheets PDF



Part Number HY5N50T
Manufacturers HY ELECTRONIC
Logo HY ELECTRONIC
Description 500V / 5A N-Channel Enhancement Mode MOSFET
Datasheet HY5N50T DatasheetHY5N50T Datasheet (PDF)

HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A Features • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 TO-220AB 1 2 3 ITO-220AB 12 3.

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HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A Features • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 TO-220AB 1 2 3 ITO-220AB 12 3 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY5N50T 5N50T TO-220AB 50PCS/TUBE HY5N50FT 5N50FT ITO-220AB 50PCS/TUBE 1 Gate 3 Source Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol HY5N50T HY5N50FT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS +30 Continuous Drain Current TC=25℃ ID 5 5 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=5A, VDD=95V, L=11mH Operating Junction and Storage Temperature Range IDM PD EAS TJ, TSTG 20 71 0.57 20 27 0.22 135 -55 to +150 Units V V A A W mJ ℃ Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter Junction-to-Case Thermal Resistance Junction-to-Case Thermal Resistance Symbol RqJC RqJA HY5N50T 1.76 50 HY5N50FT 4.6 110 Units ℃/W ℃/W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV 1.0, 24-Sept-2012 PAGE.1 HY5N50T / HY5N50FT Electrical Characteristics ( TC=25℃, Unless otherwise noted ) Paramter Symbol Test Condition Min. Typ. Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate Body Leakage Current BVDSS VGS(th) RDS(ON) IDSS IGSS VGS=0V、ID=250uA VDS=VGS、ID=250uA VGS=10V、ID=2.5A VDS=500V、VGS=0V VGS=+30V、VDS=0V 500 2.0 - 1.2 - Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg - 9.6 Qgs VDS=400V,ID=5A VGS=10V - 2.1 Qgd - 2.7 Turn-On Delay Time td(on) - 15.8 Turn-On Rise Time Turn-Off Delay Time tr VDD=250V,ID=5A - 36.2 td(off) VGS=10V,RG=25W - 22.6 Turn-Off Fall Time tf - 18.8 Input Capacitance Ciss - 465 Output Capacitance Coss VDS=25V,VGS=0V f=1.0MHZ - 76 Reverse Transfer Capacitance Crss - 2.1 Source-Drain Diode Max. Diode Forwad Voltage IS - -- Max. Pulsed Source Current Diode Forward Voltage ISM VSD IS=5A、VGS=0V --- Reverse Recovery Time Reverse Recovery Charge trr VGS=0V、IS=5A Qrr di/dt=100A/us - 245 - 2.2 Max. 4.0 1.5 10 +100 16 21 48 28 26 - 5.0 20 1.4 - Units V V W uA nA nC ns pF A A V ns uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV 1.0, 24-Sept-2012 PAGE.2 HY5N50T / HY5N50FT ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 12 10 VGS= 20V~ 8.0V 8 7.0V 10 VDS =50V 6 TJ = 125oC 25oC 6.0V 1 4 2 5.0V -55oC 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric 50 0.1 1 2345678 VGS - Gate-to-Source Voltage (V) Fig.2 Transfer Characteristric 9 48 ID =2.5A 36 RDS(ON) - On Resistance(W) RDS(ON) - On Resistance(W) C - Capacitance (pF) 2 VGS=10V 1 VGS = 20V 4 2 0 02468 ID - Drain Current (A) Fig.3 On-Resistance vs Drain Current 0 10 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.4 On-Resistance vs Gate to Source Voltage 1000 800 f = 1MHz VGS = 0V 600 Ciss 400 200 Crss Coss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic 30 VGS - Gate-to-Source Voltage (V) 12 ID =5.0A 10 VDS=400V VDS=250V 8 VDS=100V 6 4 2 0 02468 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic 10 REV 1.0, 24-Sept-2012 PAGE.3 HY5N50T / HY5N50FT Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 2.5 VGS =10 V ID =2.5A 2 1.2 ID = 250mA 1.1 BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 1.5 1 1 0.9 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature Fig.8 Breakdown Voltage vs Junction Temperature 100 VGS = 0V 10 TJ = 125oC 1 25oC -55oC 0.1 IS - Source Current (A) 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 1.4 Fig.9 Body Diode Forward Voltage Characteristic REV 1.0, 24-Sept-2012 PAGE.4 .


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