Document
HY5N50T / HY5N50FT
500V / 5A N-Channel Enhancement Mode MOSFET
500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A
Features
• Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026
TO-220AB
1 2 3
ITO-220AB
12 3
2 Drain
Marking & Ordering Information
TYPE
MARKING PACKAGE PACKING
HY5N50T
5N50T
TO-220AB 50PCS/TUBE
HY5N50FT
5N50FT
ITO-220AB 50PCS/TUBE
1 Gate
3 Source
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol HY5N50T
HY5N50FT
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS +30
Continuous Drain Current
TC=25℃
ID
5
5
Pulsed Drain Current 1)
Maximum Power Dissipation Derating Factor
TC=25℃
Avalanche Energy with Single Pulse IAS=5A, VDD=95V, L=11mH
Operating Junction and Storage Temperature Range
IDM PD
EAS TJ, TSTG
20
71 0.57
20
27 0.22
135
-55 to +150
Units
V V A A W
mJ ℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics Parameter
Junction-to-Case Thermal Resistance Junction-to-Case Thermal Resistance
Symbol RqJC RqJA
HY5N50T 1.76 50
HY5N50FT 4.6 110
Units
℃/W ℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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HY5N50T / HY5N50FT
Electrical Characteristics ( TC=25℃, Unless otherwise noted )
Paramter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate Body Leakage Current
BVDSS VGS(th) RDS(ON) IDSS IGSS
VGS=0V、ID=250uA VDS=VGS、ID=250uA VGS=10V、ID=2.5A VDS=500V、VGS=0V VGS=+30V、VDS=0V
500 2.0
-
1.2 -
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg - 9.6
Qgs
VDS=400V,ID=5A VGS=10V
-
2.1
Qgd - 2.7
Turn-On Delay Time
td(on)
- 15.8
Turn-On Rise Time Turn-Off Delay Time
tr VDD=250V,ID=5A - 36.2
td(off)
VGS=10V,RG=25W
-
22.6
Turn-Off Fall Time
tf
- 18.8
Input Capacitance
Ciss
- 465
Output Capacitance
Coss
VDS=25V,VGS=0V f=1.0MHZ
-
76
Reverse Transfer Capacitance
Crss
- 2.1
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
--
Max. Pulsed Source Current Diode Forward Voltage
ISM VSD IS=5A、VGS=0V
---
Reverse Recovery Time Reverse Recovery Charge
trr VGS=0V、IS=5A Qrr di/dt=100A/us
- 245 - 2.2
Max.
4.0 1.5 10 +100
16 21 48 28 26 -
5.0 20 1.4
-
Units
V V W uA nA
nC
ns
pF
A A V ns uC
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%
REV 1.0, 24-Sept-2012
PAGE.2
HY5N50T / HY5N50FT
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
12 10 VGS= 20V~ 8.0V
8
7.0V
10 VDS =50V
6
TJ = 125oC
25oC
6.0V
1
4
2
5.0V
-55oC
0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
50
0.1 1
2345678 VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
9
48 ID =2.5A
36
RDS(ON) - On Resistance(W)
RDS(ON) - On Resistance(W)
C - Capacitance (pF)
2 VGS=10V
1 VGS = 20V
4 2
0 02468 ID - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
0 10 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
Fig.4 On-Resistance vs Gate to Source Voltage
1000 800
f = 1MHz VGS = 0V
600 Ciss
400
200 Crss
Coss
0 0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
30
VGS - Gate-to-Source Voltage (V)
12 ID =5.0A
10
VDS=400V VDS=250V
8 VDS=100V
6
4
2
0 02468 Qg - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
10
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PAGE.3
HY5N50T / HY5N50FT
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
2.5 VGS =10 V ID =2.5A
2
1.2 ID = 250mA
1.1
BVDSS - Breakdown Voltage (Normalized)
RDS(ON) - On-Resistance (Normalized)
1.5 1
1
0.9 0.5
0 -50
-25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC)
0.8 -50
-25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC)
Fig.7 On-Resistance vs Junction Temperature Fig.8 Breakdown Voltage vs Junction Temperature
100 VGS = 0V
10
TJ = 125oC 1
25oC
-55oC 0.1
IS - Source Current (A)
0.01 0.2
0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V)
1.4
Fig.9 Body Diode Forward Voltage Characteristic
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PAGE.4
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