Ordering number:EN837E
NPN Triple Diffused Planar Silicon Transistor
2SD1159
TV Horizontal Deflection Output, High-Curr...
Ordering number:EN837E
NPN Triple Diffused Planar Silicon
Transistor
2SD1159
TV Horizontal Deflection Output, High-Current Switching Applications
Features
· Capable of efficient drive with small internal loss due to excellent tf.
Package Dimensions
unit:mm
2010C
[2SD1159]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
2.7 14.0
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
ICBO IEBO hFE1 hFE2
fT VCE(sat) VBE(sat)
VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A VCE=5V, IC=1A IC=4A, IB=0.4A IC=4A, IB=0.4A
2.55
Conditions
Conditions
2.55
1 : Base
0.4
2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46
Ratings 200 60 6 4.5 10 40 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ max
Unit
0.1 mA
0.1 mA
30 160
25
10 MHz
0.5 1.0 V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s...
