FMMT4123

SMD Type Switching Transistors FMMT4123 TransistIoCrs Features Switching transistors. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj,Tstg Rating 40 30 5 200 330 -55 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector www.kexin.com.cn 1 SMD Type Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * DC current gain * Current-gain-bandwidth product Output capacitance Input capacitance Noise figure Small signal current transfer Delay time Rise time Storage time Fall time * Pulse test: tp 300ìs; d 0.02. Marking Marking ZB FMMT4123 Symbol Testconditons V(BR)CBO IC=10ìA V(BR)CEO IC=1mA V(BR)EBO IE=10ìA ICBO VCE=20V IEBO VEB=3V VCE(sat) IC=50mA, IB=5mA VBE(sat) IC=50mA, IB=5mA hFE IC=2mA, VCE=1V fT IC=10mA, VCE=20V f=100MHz Cobo Cibo NF VCB=5V, IE=0, f=140KHz VBE=0.5V, IC=0, f=140KHz VCE=5V IC=200ìA,Rg=2kÙ f=30Hz to 15KHz at-3dB points hfe IC=2mA, VCE=1V, f=1KHz td VCC=3V, IC=10mA,IB1=1mA tr VBE(off)=0.5V ts VCC=3V, IC=1...