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MMBTA56 Dataheets PDF



Part Number MMBTA56
Manufacturers KEXIN
Logo KEXIN
Description Driver Transistors
Datasheet MMBTA56 DatasheetMMBTA56 Datasheet (PDF)

SMD Type Features SOT-23 package Driver Transistors MMBTA55,MMBTA56 TransistIoCrs +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board(* 1) Derate above 25 Thermal Resistance, Junction-to-Am.

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SMD Type Features SOT-23 package Driver Transistors MMBTA55,MMBTA56 TransistIoCrs +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board(* 1) Derate above 25 Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Symbol VCEO VCBO VEBO IC PD RèJA PD RèJA Tj Tstg MMBTA55 MMBTA56 -60 -80 -60 -80 -4.0 -500 225 1.8 556 300 2.4 417 150 -55 to +150 Unit V V V mA mW mW/ /W mW mW/ /W www.kexin.com.cn 1 SMD Type TransistIoCrs MMBTA55,MMBTA56 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-emitter breakdown voltage* MMBTA55 V(BR)CEO IC = -1.0 mA, IB = 0 MMBTA56 -60 -80 Emitter-base breakdown voltage V(BR)EBO IE = -100 ìA, IC = 0 -4.0 Base cutoff current ICES VCE = -60 V, IB = 0 Collector cutoff current MMBTA55 MMBTA56 ICBO VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 DC current gain IC = -10 mA, VCE = -1.0 V HFE IC = -100 mA, VCE = -1.0 V 100 100 Collector-emitter saturation voltage VCE(sat) IC = -100 mA, IB = -10 mA Base-emitter saturation voltage Current-gain-bandwidth product VBE(on) fT IC = -100 mA, VCE = -1.0 V IC = -100 mA, VCE = -1.0 V, f = 100 MHz 50 * Pulse test: pulse width 300 ìs, duty cycle 2.0%. Typ Max Unit V V V -0.1 ìA -0.1 ìA -0.1 ìA -0.25 -1.2 V V MHz hFE Classification TYPE Marking MMBTA55 2H MMBTA56 2G 2 www.kexin.com.cn .


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