Freescale Semiconductor Technical Data
Document Number: MRF8S18210WHS Rev. 0, 4/2012
RF Power Field Effect Transistors...
Freescale Semiconductor Technical Data
Document Number: MRF8S18210WHS Rev. 0, 4/2012
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility on CCDF.
Frequency 1930 MHz 1960 MHz 1995 MHz
Gps (dB) 17.8 17.8 18.1
ηD Output PAR ACPR
(%)
(dB)
(dBc)
29.2 7.0 --34.2
28.2 7.0 --34.4
27.6 7.1 --34.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW 1800 MHz Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ =
1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 1805 MHz 1840 MHz 1880 MHz
Gps (dB) 18.2 18.1 18.2
ηD Output PAR ACPR
(%)
(dB)
(dBc)
30.1 7.3 --35.1
29.1 7.4 --35.4
27.8 7.4 --35.9
Features
Designed for Wide Instantaneous Bandwidth Applications Designed for Wideband Applications that Require 40 MHz Signal Bandwidth 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters
and C...
