PMSTA43

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product data sheet Supersedes data of 1997 Jun 19 1999 May 21 NXP Semiconductors NPN high-voltage transistors Product data sheet PMSTA42; PMSTA43 FEATURES High current (max. 500 mA) High voltage (max. 200 V). APPLICATIONS High-voltage switching in telephony applications. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complements: PMSTA92 and PMSTA93. handbook, halfpage 3 3 MARKING TYPE NUMBER PMSTA42 PMSTA43 MARKING CODE(1) ∗1D ∗1E Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. 1 Top view 1 2 MAM062 2 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage PMSTA42 PMSTA43 collector-emitter voltage PMSTA42 PMSTA43 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. MAX. UNIT − 300 V − 200 V − 300 V − 200 V −6V − 100 mA − 200 mA − 100 mA − 200 mW −65 +150 °C − 150 °C −65 +150 °C 1999 May 21 2 NXP Semiconductors NPN high-volta...